Agilent Technologies, Inc. ATF-26884-STR | 搜芯易Sourcengine

Agilent Technologies, Inc. ATF-26884-STR

生命周期状态
Discontinued
说明
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-PRDB-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
JUNCTION
J-STD-609 Code
e0
Operating Mode
DEPLETION MODE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KU BAND
Power Gain-Min (Gp) (dB)
7
Drain Current-Max (ID) (A)
0.09
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
7
Operating Temperature-Max (Cel)
175