Agilent Technologies, Inc. ATF-10136-TR1 | 搜芯易Sourcengine

Agilent Technologies, Inc. ATF-10136-TR1

生命周期状态
Transferred
说明
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
X-CXMW-F4
Configuration
SINGLE
Package Shape
UNSPECIFIED
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
JUNCTION
J-STD-609 Code
e0
Operating Mode
DEPLETION MODE
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
UNSPECIFIED
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
X BAND
Power Gain-Min (Gp) (dB)
12
Power Dissipation-Max (W)
0.43
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
5
Operating Temperature-Max (Cel)
175