Agilent Technologies, Inc. ATF-10136-STR | 搜芯易Sourcengine

Agilent Technologies, Inc. ATF-10136-STR

生命周期状态
Discontinued
说明
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
X-CXMW-F4
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
UNSPECIFIED
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
UNSPECIFIED
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
12 dB
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
X BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
5 V
Operating Temperature-Max
175 Cel
Power Dissipation-Max (Abs)
0.43 W
Transistor Element Material
GALLIUM ARSENIDE