HEWLETT PACKARD CO ATF-10136-STR | 搜芯易Sourcengine

HEWLETT PACKARD CO ATF-10136-STR

生命周期状态
Transferred
说明
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

Application
AMPLIFIER
JESD-30 Code
S-CXMW-F4
Configuration
SINGLE
Package Shape
SQUARE
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL SEMICONDUCTOR
Operating Mode
DEPLETION MODE
DLA Qualification
Not Qualified
Terminal Position
UNSPECIFIED
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
X BAND
Power Gain-Min (Gp) (dB)
12
Drain Current-Max (ID) (A)
0.18
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
5
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
0.43