ASI Semiconductor, Inc. AT9000A11 | 搜芯易Sourcengine

ASI Semiconductor, Inc. AT9000A11

生命周期状态
Active-Unconfirmed
说明
Variable Capacitance Diode, C Band, 0.4pF C(T), 90V, Silicon, Abrupt
类别
Semiconductors Diodes Varactors VARIABLE CAPACITANCE DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.80
SB Code
8541.10.00.80

Diode Type
VARIABLE CAPACITANCE DIODE
JESD-30 Code
O-CEMW-N2
Package Shape
ROUND
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
NO LEAD
Frequency Band
C BAND
Terminal Position
END
Quality Factor-Min
1100
Diode Cap Tolerance
10 %
Number of Terminals
2
Qualification Status
Not Qualified
Breakdown Voltage-Min
90 V
Diode Capacitance-Nom
0.4 pF
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Diode Element Material
SILICON
Diode Capacitance Ratio-Min
5.4
Variable Capacitance Diode Classification
ABRUPT