ASI Semiconductor, Inc. AT301221 | 搜芯易Sourcengine

ASI Semiconductor, Inc. AT301221

生命周期状态
Active
说明
Variable Capacitance Diode, L Band, 8.2pF C(T), 30V, Silicon, Abrupt
类别
Semiconductors Diodes Varactors VARIABLE CAPACITANCE DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.80
SB Code
8541.10.00.80

Diode Type
VARIABLE CAPACITANCE DIODE
JESD-30 Code
O-CXMW-F2
Package Shape
ROUND
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
Frequency Band
L BAND
DLA Qualification
Not Qualified
Terminal Position
UNSPECIFIED
Quality Factor-Min
2400
Number of Terminals
2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Diode Element Material
SILICON
Diode Cap Tolerance (%)
10
Breakdown Voltage-Min (V)
30
Diode Capacitance-Nom (pF)
8.2
Diode Capacitance Ratio-Min
4.2
Variable Capacitance Diode Classification
ABRUPT