Agilent Technologies, Inc. AT-64020G | 搜芯易Sourcengine

Agilent Technologies, Inc. AT-64020G

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-MRDB-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
J-STD-609 Code
e3
Terminal Finish
TIN
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
4
Package Body Material
METAL
Polarity/Channel Type
NPN
Highest Frequency Band
S BAND
DC Current Gain-Min (hFE)
20
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.2
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
20