Broadcom Inc. AT-42000-GP4 | 搜芯易Sourcengine

Broadcom Inc. AT-42000-GP4

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Bipolar Transistors Transistor Si
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-XUUC-N2
Configuration
SINGLE
Package Shape
SQUARE
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
Terminal Position
UPPER
Additional Feature
HIGH RELIABILITY, LOW NOISE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
NPN
Highest Frequency Band
C BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
30
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
0.08 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
0.6 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
12 V
Transition Frequency-Nom (fT)
9000 MHz