Broadcom Inc. AT-41435G | 搜芯易Sourcengine

Broadcom Inc. AT-41435G

生命周期状态
EOL
RoHS
符合RoHS标准
说明
RF TRANS NPN 12V 8GHZ 35 MICRO X
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
X-CXMW-F4
Configuration
SINGLE
JESD-609 Code
e3
Package Shape
UNSPECIFIED
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Finish
MATTE TIN
Terminal Position
UNSPECIFIED
Additional Feature
HIGH RELIABILITY, LOW NOISE
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
C BAND
Transistor Application
AMPLIFIER
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.06 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
0.5 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
12 V
Peak Reflow Temperature (Cel)
260
Transition Frequency-Nom (fT)
8000 MHz