MICROSS COMPONENTS ASJD1200R045Y-EX/V | 搜芯易Sourcengine

MICROSS COMPONENTS ASJD1200R045Y-EX/V

生命周期状态
Active
REACH
REACH compliant
说明
Power Field-Effect Transistor, 50A I(D), 1200V, 0.045ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-257AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XSFM-P3
Configuration
SINGLE
JEDEC-95 Code
TO-257AA
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
50
Transistor Element Material
SILICON CARBIDE
DS Breakdown Voltage-Min (V)
1200
Operating Temperature-Max (Cel)
200
Pulsed Drain Current-Max (IDM) (A)
150
Drain-source On Resistance-Max (ohm)
0.045
Screening Level / Reference Standard
MIL-19500