ASI Semiconductor, Inc. ASI10830 | 搜芯易Sourcengine

ASI Semiconductor, Inc. ASI10830

生命周期状态
Active
说明
RF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-CRFM-F4
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Drain Current-Max (ID) (A)
9
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
65
Operating Temperature-Max (Cel)
200