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AS8E512K8CW-250/IT

AUSTIN SEMICONDUCTOR INC

AUSTIN SEMICONDUCTOR INC AS8E512K8CW-250/IT
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Technology
    CMOS
  • Toggle Bit
    YES
  • Width (mm)
    7.62
  • Length (mm)
    42.418
  • Data Polling
    YES
  • JESD-30 Code
    R-XDIP-T32
  • Memory Width
    8
  • Package Code
    DIP
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • J-STD-609 Code
    e4
  • Memory IC Type
    EEPROM MODULE
  • Operating Mode
    ASYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    PALLADIUM GOLD
  • Write Protection
    SOFTWARE
  • DLA Qualification
    Not Qualified
  • Page Size (words)
    128
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    DUAL
  • Memory Organization
    512KX8
  • Number of Functions
    1
  • Number of Terminals
    32
  • Terminal Pitch (mm)
    2.54
  • Access Time-Max (ns)
    250
  • Number of Words Code
    512K
  • Memory Density (bits)
    4194304
  • Package Body Material
    UNSPECIFIED
  • Seated Height-Max (mm)
    4.5974
  • Supply Voltage-Max (V)
    5.5
  • Supply Voltage-Min (V)
    4.5
  • Supply Voltage-Nom (V)
    5
  • Number of Words (words)
    524288
  • Programming Voltage (V)
    5
  • Standby Current-Max (A)
    0.02
  • Supply Current-Max (mA)
    120
  • Package Equivalence Code
    DIP32,.6
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -40
  • Write Cycle Time-Max (tWC) (ms)
    10

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AS8E512K8CW-250/IT
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AS8E512K8CW-250/IT