AS4LC4M4EC-6/883C
AUSTIN SEMICONDUCTOR INC
- 生命周期状态Discontinued
- 说明EDO DRAM, 4MX4, 60ns, CMOS, CDSO24
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width11.303 mm
- Length20.955 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeFAST PAGE WITH EDO
- JESD-30 CodeR-CDSO-N24
- Memory Width4
- Organization4MX4
- Package CodeSON
- Self RefreshNO
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- Memory Density16777216 bit
- Memory IC TypeEDO DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles2048
- Terminal Pitch1.27 mm
- Access Time-Max60 ns
- Number of Ports1
- Number of Words4194304 words
- Screening LevelMIL-STD-883
- Terminal FinishTIN LEAD
- Seated Height-Max2.54 mm
- Temperature GradeMILITARY
- Terminal PositionDUAL
- Additional FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
- Supply Current-Max120 mA
- Number of Functions1
- Number of Terminals24
- Standby Current-Max0.001 Amp
- Number of Words Code4M
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Output Characteristics3-STATE
- Package Equivalence CodeSOLCC24/28,.45
- Operating Temperature-Max125 Cel
- Operating Temperature-Min-55 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)3 V
- Supply Voltage-Nom (Vsup)3.3 V
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AS4LC4M4EC-6/883C