AS4LC2M8S0-10TC
Alliance Semiconductor Corporation
- 生命周期状态Discontinued
- 说明Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width10.16 mm
- Length18.41 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeDUAL BANK PAGE BURST
- JESD-30 CodeR-PDSO-G44
- Memory Width8
- Organization2MX8
- Package CodeTSOP2
- Self RefreshYES
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density16777216 bit
- Memory IC TypeSYNCHRONOUS DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles4096
- Terminal Pitch0.8 mm
- Access Time-Max6 ns
- Number of Ports1
- Number of Words2097152 words
- Terminal FinishTIN LEAD
- Seated Height-Max1.2 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Supply Current-Max120 mA
- Number of Functions1
- Number of Terminals44
- Standby Current-Max0.002 Amp
- Number of Words Code2M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length1,2,4,8,FP
- Interleaved Burst Length1,2,4,8
- Package Equivalence CodeTSOP44,.46,32
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)3 V
- Supply Voltage-Nom (Vsup)3.3 V
- Clock Frequency-Max (fCLK)100 MHz
- Peak Reflow Temperature (Cel)240
AS4LC2M8S0-10TC有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
AS4LC2M8S0-10TC