AS4DDR232M64PBGR-3/IT
AUSTIN SEMICONDUCTOR INC
- 生命周期状态Transferred
- RoHS符合RoHS标准
- 说明DDR2 DRAM, 32MX64, 0.45ns, CMOS, PBGA255
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- TechnologyCMOS
- Width (mm)25
- Access ModeFOUR BANK PAGE BURST
- Length (mm)32
- JESD-30 CodeR-PBGA-B255
- Memory Width64
- Package CodeBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee1
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Terminal FinishTIN SILVER COPPER
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization32MX64
- Number of Functions1
- Number of Terminals255
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)0.45
- Number of Words Code32M
- Memory Density (bits)2147483648
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)2.03
- Supply Voltage-Max (V)1.9
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)33554432
- Moisture Sensitivity Level3
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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