AUSTIN SEMICONDUCTOR INC AS4DDR16M72-75/IT | 搜芯易Sourcengine

AUSTIN SEMICONDUCTOR INC AS4DDR16M72-75/IT

生命周期状态
Transferred
说明
DDR1 DRAM, 16MX72, 0.75ns, CMOS, PBGA219
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
Access Mode
FOUR BANK PAGE BURST
JESD-30 Code
R-PBGA-B219
Memory Width
72
Package Code
BGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e4
Memory IC Type
DDR1 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Finish
PALLADIUM GOLD
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
16MX72
Number of Functions
1
Number of Terminals
219
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
0.75
Number of Words Code
16M
Memory Density (bits)
1207959552
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
2.03
Supply Voltage-Max (V)
2.7
Supply Voltage-Min (V)
2.3
Supply Voltage-Nom (V)
2.5
Number of Words (words)
16777216
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40