MICROSS COMPONENTS AS4DDR16M72-75/ET | 搜芯易Sourcengine

MICROSS COMPONENTS AS4DDR16M72-75/ET

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
DDR1 DRAM, 16MX72, 0.75ns, CMOS, PBGA219
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Access Mode
FOUR BANK PAGE BURST
JESD-30 Code
R-PBGA-B219
Memory Width
72
Organization
16MX72
Package Code
BGA
Self Refresh
YES
JESD-609 Code
e4
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
1207959552 bit
Memory IC Type
DDR1 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Terminal Pitch
1.27 mm
Access Time-Max
0.75 ns
Number of Ports
1
Number of Words
16777216 words
Terminal Finish
PALLADIUM GOLD
Seated Height-Max
2.03 mm
Temperature Grade
MILITARY
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Supply Current-Max
2000 mA
Number of Functions
1
Number of Terminals
219
Standby Current-Max
0.02 Amp
Number of Words Code
16M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
BGA219,16X16,50
Operating Temperature-Max
125 Cel
Operating Temperature-Min
-55 Cel
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Clock Frequency-Max (fCLK)
133 MHz