Ampleon Netherlands B.V. ART2K0FEU | 搜芯易Sourcengine

Ampleon Netherlands B.V. ART2K0FEU

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
RF Power Transistor, 0.001 to 0.40 GHz, 2000 W, 28.4 dB, 65 V, SOT539AN, LDMOS
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CDFM-F4
Configuration
Dual, Common Source
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
27
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Feedback Cap-Max (Crss) (pF)
1.73
Operating Temperature-Max (Cel)
225
Screening Level / Reference Standard
IEC-60134; MIL-STD-883E