Microsemi Corporation ARF473G | 搜芯易Sourcengine

Microsemi Corporation ARF473G

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CDFM-F4
Configuration
COMMON SOURCE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
13
Drain Current-Max (ID) (A)
10
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
18
DS Breakdown Voltage-Min (V)
500
Feedback Cap-Max (Crss) (pF)
12
Turn-off Time-Max (toff) (ns)
28
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-55