Microsemi Corporation ARF461BG | 搜芯易Sourcengine

Microsemi Corporation ARF461BG

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-247AD
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e1
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Power Dissipation-Max (W)
250
Drain Current-Max (ID) (A)
6.5
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
1000
Operating Temperature-Max (Cel)
150