Microsemi Corporation ARF449BG | 搜芯易Sourcengine

Microsemi Corporation ARF449BG

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-247
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
12
Drain Current-Max (ID) (A)
9
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
17
DS Breakdown Voltage-Min (V)
450
Feedback Cap-Max (Crss) (pF)
40
Turn-off Time-Max (toff) (ns)
32
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55