Microsemi Corporation APTM60A23FT1G | 搜芯易Sourcengine

Microsemi Corporation APTM60A23FT1G

生命周期状态
EOL
说明
MOSFET 2N-CH 600V 20A SP1
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUFM-X12
Configuration
2 N-Channel (Half Bridge)
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
UPPER
Additional Feature
AVALANCHE RATED
Number of Elements
2
Number of Terminals
12
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
20 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
600 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.23 ohm
Pulsed Drain Current-Max (IDM)
125 A