APTM120U100D-ALN
Microsemi Corporation
- 生命周期状态Transferred
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 116A I(D), 1-Element, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Elements1
- Power Dissipation-Max (W)3290
- Drain Current-Max (ID) (A)116
- Operating Temperature-Max (Cel)150
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APTM120U100D-ALN
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APTM120U100D-ALN