Microsemi Corporation APTM10DSKM09T3 | 搜芯易Sourcengine

Microsemi Corporation APTM10DSKM09T3

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 139A I(D), 100V, 0.0095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XUFM-X25
Configuration
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
AVALANCHE RATED
Number of Elements
2
Number of Terminals
25
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
390
Drain Current-Max (ID) (A)
139
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
3200
Pulsed Drain Current-Max (IDM) (A)
430
Drain-source On Resistance-Max (ohm)
0.0095