Microsemi Corporation APTM100UM60FAG | 搜芯易Sourcengine

Microsemi Corporation APTM100UM60FAG

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 129A I(D), 1000V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PUFM-X2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e1
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
129
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
1000
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
3000
Pulsed Drain Current-Max (IDM) (A)
516
Drain-source On Resistance-Max (ohm)
0.07