Microsemi Corporation APTM100DA18T | 搜芯易Sourcengine

Microsemi Corporation APTM100DA18T

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 43A I(D), 1000V, 0.215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUFM-X12
Configuration
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
Terminal Position
UPPER
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
12
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
43 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
1000 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
780 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
3000 mJ
Drain-source On Resistance-Max
0.215 ohm
Pulsed Drain Current-Max (IDM)
172 A