ADVANCED POWER TECHNOLOGY INC APTM100DA18T | 搜芯易Sourcengine

ADVANCED POWER TECHNOLOGY INC APTM100DA18T

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 43A I(D), 1000V, 0.215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XUFM-X12
Configuration
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
12
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
43
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
1000
Avalanche Energy Rating (Eas) (mJ)
3000
Pulsed Drain Current-Max (IDM) (A)
172
Drain-source On Resistance-Max (ohm)
0.215