Microsemi Corporation APTGV50H60BT3G | 搜芯易Sourcengine

Microsemi Corporation APTGV50H60BT3G

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT MODULE 600V 65A 250W SP3
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max (V)
2.45
Number of Elements
1
Power Dissipation-Max (W)
250
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
65
Operating Temperature-Max (Cel)
100
Collector-emitter Voltage-Max (V)
600
Configuration
Boost Chopper, Full Bridge