Microsemi Corporation APTGV25H120BG | 搜芯易Sourcengine

Microsemi Corporation APTGV25H120BG

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT MODULE 1200V 40A 156W SP4
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUFM-X21
Configuration
Boost Chopper, Full Bridge
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
J-STD-609 Code
e1
VCEsat-Max (V)
2.1
Case Connection
ISOLATED
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
5
Number of Terminals
21
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
312
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
140
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
610
Collector Current-Max (IC) (A)
40
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200