Microsemi Corporation APTGT580U60D4G | 搜芯易Sourcengine

Microsemi Corporation APTGT580U60D4G

生命周期状态
EOL
RoHS
符合RoHS标准
说明
IGBT MODULE 600V 760A 1600W D4
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
1.9 V
JESD-30 Code
R-XUFM-X5
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
5
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
760 A
Power Dissipation-Max (Abs)
1600 W
Collector-emitter Voltage-Max
600 V
Configuration
Single