Microsemi Corporation APTGT35X120T3G | 搜芯易Sourcengine

Microsemi Corporation APTGT35X120T3G

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
MOTOR CONTROL
JESD-30 Code
R-XUFM-X25
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
J-STD-609 Code
e1
VCEsat-Max (V)
2.1
Case Connection
ISOLATED
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
6
Number of Terminals
25
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
208
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
140
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
610
Collector Current-Max (IC) (A)
55
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200