Microsemi Corporation APTGT100DH60T3G | 搜芯易Sourcengine

Microsemi Corporation APTGT100DH60T3G

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT MODULE 600V 150A 340W SP3
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X11
Configuration
Asymmetrical Bridge
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
1.9
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
11
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
340
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
180
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
370
Collector Current-Max (IC) (A)
75
Operating Temperature-Max (Cel)
175
Collector-emitter Voltage-Max (V)
600
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED