APTGL60H120T3G
Microsemi Corporation
- 生命周期状态Transferred
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max (V)2.25
- Number of Elements1
- Power Dissipation-Max (W)280
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Collector Current-Max (IC) (A)80
- Operating Temperature-Max (Cel)175
- Collector-emitter Voltage-Max (V)1200
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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APTGL60H120T3G