Microsemi Corporation APTC60HM24T3G | 搜芯易Sourcengine

Microsemi Corporation APTC60HM24T3G

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 4-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XUFM-X20
Configuration
BRIDGE, 4 ELEMENTS
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
UPPER
Number of Elements
4
Number of Terminals
20
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
95
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Avalanche Energy Rating (Eas) (mJ)
1900
Pulsed Drain Current-Max (IDM) (A)
260
Drain-source On Resistance-Max (ohm)
0.024