ADVANCED POWER TECHNOLOGY INC APT90GF100JN | 搜芯易Sourcengine

ADVANCED POWER TECHNOLOGY INC APT90GF100JN

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 90A I(C), 1000V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PUFM-X4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
4
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
FAST SWITCHING
Fall Time-Max (ns)
700
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
100
Power Dissipation-Max (W)
415
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
80
Turn-on Time-Nom (ton) (ns)
40
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Max (toff) (ns)
140
Turn-off Time-Nom (toff) (ns)
90
Collector Current-Max (IC) (A)
90
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
1000
Power Dissipation Ambient-Max (W)
415