Microsemi Corporation APT60M75JVFR | 搜芯易Sourcengine

Microsemi Corporation APT60M75JVFR

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET N-CH 600V 62A ISOTOP
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PUFM-X4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
UPPER
Additional Feature
AVALANCHE ENERGY RATED
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
62 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
600 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
3600 mJ
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
0.075 ohm
Pulsed Drain Current-Max (IDM)
248 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED