APT6070BNR
ADVANCED POWER TECHNOLOGY INC
- 生命周期状态Discontinued
- 说明Power Field-Effect Transistor, 12A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247AD
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)12 A
- DS Breakdown Voltage-Min600 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)240 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)800 mJ
- Power Dissipation Ambient-Max240 W
- Drain-source On Resistance-Max0.7 ohm
- Pulsed Drain Current-Max (IDM)48 A
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APT6070BNR