APT50GS60BR
Microsemi Corporation
- 生命周期状态Transferred
- 说明Insulated Gate Bipolar Transistor, 93A I(C), 600V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountNO
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)415
- Gate-emitter Voltage-Max (V)30
- Collector Current-Max (IC) (A)93
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)5
- Collector-emitter Voltage-Max (V)600
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APT50GS60BR