Microsemi Corporation APT50GF120JRD | 搜芯易Sourcengine

Microsemi Corporation APT50GF120JRD

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
J-STD-609 Code
e1
Case Connection
ISOLATED
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
FAST SWITCHING
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
460
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
147
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
542
Collector Current-Max (IC) (A)
75
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200