ADVANCED POWER TECHNOLOGY INC APT45GP120B2D2 | 搜芯易Sourcengine

ADVANCED POWER TECHNOLOGY INC APT45GP120B2D2

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Collector Current-Max (IC)
54 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
1200 V