APT45G100BN
ADVANCED POWER TECHNOLOGY INC
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 45A I(C), 1000V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-609 Codee0
- Surface MountNO
- Terminal FinishTin/Lead (Sn/Pb)
- Fall Time-Max (tf)400 ns
- Rise Time-Max (tr)50 ns
- Polarity/Channel TypeN-CHANNEL
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)45 A
- Power Dissipation-Max (Abs)200 W
- Gate-emitter Thr Voltage-Max5 V
- Collector-emitter Voltage-Max1000 V
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APT45G100BN