APT35GP120JDF2
Microsemi Corporation
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明Insulated Gate Bipolar Transistor, 64A I(C), 1200V V(BR)CES
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Number of Elements1
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)64 A
- Power Dissipation-Max (Abs)284 W
- Collector-emitter Voltage-Max1200 V
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APT35GP120JDF2