Microsemi Corporation APT35GP120J | 搜芯易Sourcengine

Microsemi Corporation APT35GP120J

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 64A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
J-STD-609 Code
e1
Case Connection
ISOLATED
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
ULTRA FAST, LOW CONDUCTION LOSS
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
284
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
36
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
222
Collector Current-Max (IC) (A)
64
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
1200