Microsemi Corporation APT30GT60BR | 搜芯易Sourcengine

Microsemi Corporation APT30GT60BR

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 64A I(C), 600V V(BR)CES, N-Channel, TO-247AD
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-247AD
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
ULTRA FAST
Fall Time-Max (ns)
95
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
40
Power Dissipation-Max (W)
200
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
32
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
345
Collector Current-Max (IC) (A)
64
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
600
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED