APT30GN60SG
Microsemi Corporation
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountYES
- Polarity/Channel TypeN-CHANNEL
- Gate-emitter Voltage-Max30 V
- Operating Temperature-Max175 Cel
- Collector Current-Max (IC)63 A
- Power Dissipation-Max (Abs)203 W
- Gate-emitter Thr Voltage-Max6.5 V
- Collector-emitter Voltage-Max600 V
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APT30GN60SG
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APT30GN60SG