Microsemi Corporation APT20GS60SRDQ1 | 搜芯易Sourcengine

Microsemi Corporation APT20GS60SRDQ1

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
22 ns
Gate-emitter Voltage-Max
30 V
Turn-off Time-Nom (toff)
168 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
37 A
Power Dissipation-Max (Abs)
180 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
5 V
Collector-emitter Voltage-Max
600 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED