APT20GN60SDQ1
Microsemi Corporation
- 生命周期状态Transferred
- 说明Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountYES
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)136
- Gate-emitter Voltage-Max (V)30
- Collector Current-Max (IC) (A)40
- Operating Temperature-Max (Cel)175
- Gate-emitter Thr Voltage-Max (V)6.5
- Collector-emitter Voltage-Max (V)600
APT20GN60SDQ1有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
APT20GN60SDQ1