Microsemi Corporation APT20GF120SRDQ1G | 搜芯易Sourcengine

Microsemi Corporation APT20GF120SRDQ1G

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e1
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Finish
TIN SILVER COPPER
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
19 ns
Gate-emitter Voltage-Max
30 V
Turn-off Time-Nom (toff)
255 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
36 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
200 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6.5 V
Collector-emitter Voltage-Max
1200 V