Microsemi Corporation APT20GF120SRDQ1 | 搜芯易Sourcengine

Microsemi Corporation APT20GF120SRDQ1

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
200
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
19
Gate-emitter Voltage-Max (V)
30
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
255
Collector Current-Max (IC) (A)
36
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1200
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED