Microsemi Corporation APT20GF120BRD | 搜芯易Sourcengine

Microsemi Corporation APT20GF120BRD

生命周期状态
Transferred
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
NO
Fall Time-Max (ns)
190
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
130
Power Dissipation-Max (W)
200
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
20
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1200